Additional preview pages of the Q62702-A1006 datasheet.
Product details
Features
High barrier diode for double balanced mixers, phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (taped) Q62702-A1006 Pin Configuration Package1) SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings (per diode) Parameter Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbol Limit Values 90.
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Q62702-A1004- Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
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Q62702-A1017- Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Q62702-A1025- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1028- Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Q62702-A1030- Silicon Switching Diode Array (For high speed switching applications Common cathode)
Q62702-A1006 Datasheet
