Q62702-A1004 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | Q62702-A1004 |
|---|---|
| Datasheet | Q62702-A1004_SiemensSemiconductorGroup.pdf |
| File Size | 114.21 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
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Semiconductor Group 1 10.94 BAT 63 at TA = 25 °C, unless otherwise specified. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.2 V, f = 1 MHz Case capacitance Differential resistance V = 0, f = 10 kHz Series inductance Value typ. TA) Permissible Pulse load RthJS = f (tp) TA = 25 °C Permissible Pulse load IFmax / IFDC = f (tp) Semiconductor Group.
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1028 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| Q62702-A1028 | Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
| Q62702-A1030 | Silicon Switching Diode Array (For high speed switching applications Common cathode) |
| Q62702-A1031 | Silicon Switching Diode Array (For high speed switching applications Common anode) |
| Q62702-A1036 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1037 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
