Datasheet4U Logo Datasheet4U.com

Q62702-A1004 - Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Schottky Diode BAT 63 q Low barrier diode for mixer and detectors up to GHz frequencies Type Ordering Code (tape and reel) Q62702-A1004 1 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package BAT 63 63 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junction-ambient1) Symbol Values 3 100 150 – 55 … + 150 Unit V mA °C °C VR IF Tj Tstg Rth JA ≤ 450 K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BAT 63 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.