Q62702-A1004 is Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1028 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Semiconductor Group 1 10.94 BAT 63 at TA = 25 °C, unless otherwise specified. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.2 V, f = 1 MHz Case capacitance Differential resistance V = 0, f = 10 kHz Series inductance Value typ. TA) Permissible Pulse load RthJS = f (tp) TA = 25 °C Permissible Pulse load IFmax / IFDC = f (tp) Semiconductor Group.
