• Part: Q62702-A0960
  • Description: Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 88.97 KB
Download Q62702-A0960 Datasheet PDF
Siemens Semiconductor Group
Q62702-A0960
Q62702-A0960 is Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) manufactured by Siemens Semiconductor Group.
Silicon Schottky Diode Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-098 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-098 Marking Ordering Code (tape and reel) white A Q62702-A0960 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 80 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tstg Top Values 4 90 100 - 55 … + 150 Unit V m A m W - 55 … + 150 ˚C 770 690 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group BAT 14-098 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 m A IF = 10 m A Forward voltage matching IF = 10 m A Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 m A / 50 m A Symbol min. VBR VF - - ∆VF Values typ. - max. - 4 Unit V 0.43 0.55 - - 5.5 - - 10 0.35 - m V p F...