Datasheet Summary
BAR 81 Silicon RF Switching Diode
Preliminary data
- Design for use in shunt configuration
- High shunt signal isolation
- Low shunt insertion loss
Type BAR 81
Marking Ordering Code BBs Q62702Q62702-A1145
Pin Configuration 1=C 2=A 3=C 4=A
Package MW-4
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100
- 55 ... + 125
- 55 ... + 150 Unit V mA °C
VR IF Top Tstg
Semiconductor Group
Feb-26-1996
BAR 81
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
0.93 20 nA V 1
VR = 20 V, TA = 25 °C
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