Q62702-A1145 Overview
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
| Part number | Q62702-A1145 |
|---|---|
| Datasheet | Q62702-A1145_SiemensSemiconductorGroup.pdf |
| File Size | 46.08 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Preliminary data Silicon RF Switching Diode |
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+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A1103 | Silicon Schottky Diode |
| Q62702-A1104 | Silicon Schottky Diode |
| Q62702-A1105 | Silicon Schottky Diodes |
| Q62702-A113 | Silicon Switching Diodes |
| Q62702-A1159 | Silicon Schottky Diodes |
| Q62702-A1160 | Silicon Schottky Diodes |
| Q62702-A1161 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A1162 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A118 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| Q62702-A118 | Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply |