• Part: Q62702-A1211
  • Description: Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 24.68 KB
Download Q62702-A1211 Datasheet PDF
Siemens Semiconductor Group
Q62702-A1211
Q62702-A1211 is Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) manufactured by Siemens Semiconductor Group.
BAR 63-02W Silicon PIN Diode - PIN diode for high speed switching of RF signals - Low forward resistance, small capacitance small inductance - Very low capacitance - For frequencies up to 3 GHz VES05991 Type BAR 63-02W Marking Ordering Code G Q62702-A1211 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 115 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 50 100 250 150 -55 ...+150 -55 ...+150 Unit V m A m W °C °C VR IF Ptot Tj Top Tstg Rth JA Rth JS ≤ 220 ≤ 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 63-02W Electrical Characteristics at TA = 25 =C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 10 1.2 Unit V(BR) IR VF - V µA V I (BR) = 5 µA Reverse current VR = 35 V Forward voltage I F = 100 m A AC characteristics Diode...