Q62702-A1211
Q62702-A1211 is Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) manufactured by Siemens Semiconductor Group.
BAR 63-02W
Silicon PIN Diode
- PIN diode for high speed switching of RF signals
- Low forward resistance, small capacitance small inductance
- Very low capacitance
- For frequencies up to 3 GHz
VES05991
Type BAR 63-02W
Marking Ordering Code G Q62702-A1211
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 115 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction
- ambient
1)
Symbol
Value 50 100 250 150 -55 ...+150 -55 ...+150
Unit V m A m W °C °C
VR IF Ptot Tj Top Tstg
Rth JA Rth JS
≤ 220 ≤ 140
K/W
Junction
- soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
BAR 63-02W
Electrical Characteristics at TA = 25 =C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 10 1.2
Unit
V(BR) IR VF
- V µA V
I (BR) = 5 µA
Reverse current
VR = 35 V
Forward voltage
I F = 100 m A
AC characteristics Diode...