• Part: Q62702-A1216
  • Description: Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners)
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 14.80 KB
Download Q62702-A1216 Datasheet PDF
Siemens Semiconductor Group
Q62702-A1216
Q62702-A1216 is Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners) manufactured by Siemens Semiconductor Group.
BAR 65-02W Silicon RF Switching Diode Preliminary data - Low loss, low capacitance PIN-diode - Band switch for TV-tuners - Series diode for mobile munication transmit-receiver switch VES05991 Type BAR 65-02W Marking N Ordering Code Q62702-A1216 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 30 100 - 55 ...+125 - 55 ...+150 Unit V m A °C VR IF T op T stg Semiconductor Group Semiconductor Group Jun-18-1998 1998-11-01 BAR 65-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. 0.93 max. 20 1 n A V Unit IR VF - VR = 20 V Forward voltage I F = 100 m A AC characteristics Diode capacitance 0.6 0.57 0.65 0.56 0.6 0.9 0.8 p F VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf 0.95 0.9 - Ω I F = 5 m A, f = 100 MHz I F = 10 m A, f = 100 MHz Series inductance Ls - n H Semiconductor Group Semiconductor Group Jun-18-1998...