Q62702-A1216
Q62702-A1216 is Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners) manufactured by Siemens Semiconductor Group.
BAR 65-02W
Silicon RF Switching Diode Preliminary data
- Low loss, low capacitance PIN-diode
- Band switch for TV-tuners
- Series diode for mobile munication transmit-receiver switch
VES05991
Type BAR 65-02W
Marking N
Ordering Code Q62702-A1216
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 30 100
- 55 ...+125
- 55 ...+150 Unit V m A °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
Jun-18-1998 1998-11-01
BAR 65-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. 0.93 max. 20 1 n A V Unit
IR VF
- VR = 20 V
Forward voltage
I F = 100 m A
AC characteristics Diode capacitance
0.6 0.57 0.65 0.56 0.6 0.9 0.8 p F
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Forward resistance rf
0.95 0.9
- Ω
I F = 5 m A, f = 100 MHz I F = 10 m A, f = 100 MHz
Series inductance
Ls
- n H
Semiconductor Group Semiconductor Group
Jun-18-1998...