• Part: Q62702-A1261
  • Description: Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 46.16 KB
Download Q62702-A1261 Datasheet PDF
Siemens Semiconductor Group
Q62702-A1261
Q62702-A1261 is Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) manufactured by Siemens Semiconductor Group.
BAR 63 ... W Silicon PIN Diode - PIN diode for high speed switching of RF signal - Low forward resistance - Very low capacitance - For frequencies up to 3 GHz 2 1 VSO05561 BAR 63-04W BAR 63-05W BAR 63-06W Type BAR 63-04W BAR 63-05W BAR 63-06W Marking Ordering Code G4s G5s G6s Q62702-A1261 Q62702-A1267 Q62702-A1268 Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2 Package 3=C1/A2 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 105 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 50 100 250 150 - 55 ...+150 - 55 ...+150 Unit V m A m W °C VR IF Ptot Tj Top Tstg Rth JA Rth JS ≤ 340 ≤ 180 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group...