Q62702-A1264 Overview
W at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ.
| Part number | Q62702-A1264 |
|---|---|
| Datasheet | Q62702-A1264_SiemensSemiconductorGroup.pdf |
| File Size | 48.74 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
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W at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A1261 | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1265 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| Q62702-A1266 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| Q62702-A1267 | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1268 | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A120 | Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
| Q62702-A1200 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
| Q62702-A1201 | NPN Silicon Switching Transistor Array |
| Q62702-A1202 | PNP Silicon Switching Transistor Array |
| Q62702-A121 | SILICON PIN DIODES |