Q62702-A778 Overview
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D at TA = 25 ˚C, unless otherwise specified. Unit V(BR) 50 100 200 400 VF IR 1 50 1.6 2 V V µA Pulse generator:.
| Part number | Q62702-A778 |
|---|---|
| Datasheet | Q62702-A778_SiemensSemiconductorGroup.pdf |
| File Size | 86.03 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Switching Diodes (Switching applications High breakdown voltage) |
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Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D at TA = 25 ˚C, unless otherwise specified. Unit V(BR) 50 100 200 400 VF IR 1 50 1.6 2 V V µA Pulse generator:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
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| Q62702-A771 | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
| Q62702-A772 | Silicon PIN Diodes |
| Q62702-A773 | Silicon PIN Diodes |
| Q62702-A774 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| Q62702-A775 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A776 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A777 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A779 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A711 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |