Q62702-A779 Description
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D at TA = 25 ˚C, unless otherwise specified. Unit V(BR) 50 100 200 400 VF IR 1 50 1.6 2 V V µA Pulse generator:.
Q62702-A779 is Silicon Switching Diodes (Switching applications High breakdown voltage) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q62702-A77 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
| Q62702-A771 | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
| Q62702-A772 | Silicon PIN Diodes |
| Q62702-A773 | Silicon PIN Diodes |
| Q62702-A774 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D at TA = 25 ˚C, unless otherwise specified. Unit V(BR) 50 100 200 400 VF IR 1 50 1.6 2 V V µA Pulse generator:.