Q62702-A784 Description
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D at TA = 25 ˚C, unless otherwise specified. Unit V(BR) 50 100 200 400 VF IR 1 50 1.6 2 V V µA Pulse generator:.
Q62702-A784 is Silicon Switching Diodes (Switching applications High breakdown voltage) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q62702-A781 | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
| Q62702-A782 | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
| Q62702-A786 | Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
| Q62702-A787 | Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
| Q62702-A711 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D at TA = 25 ˚C, unless otherwise specified. Unit V(BR) 50 100 200 400 VF IR 1 50 1.6 2 V V µA Pulse generator:.