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Q62702-B0897 - Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance)

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
Q62702-B0890 Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance)
Q62702-B0893 Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance)
Q62702-B0825 Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
Q62702-B0839 Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance)
Q62702-B0853 Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance)
Q62702-B0854 Silicon Tuning Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
Q62702-B0858 Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance)
Q62702-B0860 Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance)
Q62702-B0862 Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
Q62702-B0864 Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance)

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BB 857 Silicon Tuning Diode • For SAT-indoor-units • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 857 BB 857 Marking Ordering Code O O Q62702-B0897 Q62702-B0893 unmatched inline matched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+150 -55 ...+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Mar-27-1998 1998-11-01 BB 857 Electrical Characteristics at TA = 25°C, unless otherwise specified.