Q62702-C2276 Datasheet | Siemens Semiconductor Group

BCR 183W PNP Silicon Digital Transistor - Switching circuit, inverter, interface circuit, driver circuit - Built in resistor (R1 = 10kΩ, R2 = 10kΩ) Type BCR 183W Marking Ordering Code WMs Q62702-C2276 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 10 20 100 250 150 - 65 ... + 150 m A m W °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) Rth JA Rth JS ≤ 240 ≤ 105 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Nov-27-1996 BCR 183W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 10 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IB =...