Q62702-C2279 Description
Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Unit hFE DC current gain IC = 10 µA, VCE = 5 V BC 846 AW ...
Q62702-C2279 is NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q62702-C2275 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Q62702-C2276 | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Q62702-C2278 | NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| Q62702-C2253 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit |
| Q62702-C2254 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit) |
Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Unit hFE DC current gain IC = 10 µA, VCE = 5 V BC 846 AW ...