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SFH310 Datasheet Neu: NPN-silizium-fototransistor New: Silicon NPN Phototransistor

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: SFH 310 SFH 310 FA Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA Area not flat 0.6 0.4 0.7 0.4 0.8 0.4 4.8 4.4 2.7 2.1 3.4 3.1 2.54 mm spacing 1.1 0.9 1.8 1.2 29.0 27.0 3.7 3.5 6.1 5.7 0.6 0.4 Collector/ Cathode Chip position GEX06710 ø2.9 ø2.

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 55 ...

+ 100 260 Einheit Unit °C °C Top;

Tstg TS TS 300 °C VCE IC ICS Ptot RthJA 70 50 100 165 450 V mA mA mW K/W Semiconductor Gro

Key Features

  • q Especially suitable for.

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