Datasheet4U Logo Datasheet4U.com

SFH421 - GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value 55 + 100 100 5

Key Features

  • q Very highly efficient GaAIAs-LED q Good Linearity (Ie = f [IF]) at high currents q DC (with modulation) or pulsed operations are possible q High reliability q High pulse handling capability q Suitable for surface mounting (SMT) q Available on tape and reel q SFH 421 same package as SFH 320/420 SFH 426 same package as SFH 325/425 q SFH 426: Suitable only for IR-reflow soldering. In case of dip soldering, please contact us first. 1997-11-01 Semiconductor Group 1 fpl06867 (R1) 3.8 3.4 SFH 4.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7 SFH 421 SFH 426 fpl06724 3.4 3.0 2.4 0.8 0.6 Cathode/Collector marking Approx. weight 0.03 g 1.1 0.5 0.18 0.6 0.12 0.4 Cathode/Collector GPL06724 3.7 3.3 SFH 421 TOPLED® (2.4) 2.8 2.4 4.2 3.8 0.7 Cathode/ Collector 2.54 spacing 1.1 0.9 Anode/ Emitter (2.85) GPL06880 Collector/Cathode marking (2.9) SFH 426 SIDELED® 4.2 3.8 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.