Datasheet Summary
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
SFH 495 P SFH 4552
29 27
5.0 4.2
Anode
2.54 mm spacing
5.9 5.5
0.6 0.4 0.8 0.4
Area not flat
Chip position
GEX06971
Area not flat 0.6 0.4 6.9 6.1 5.7 5.5
2.54 mm spacing
0.8 0.4
5.9 5.5
1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor)
ø5.1 ø4.8
4.0 3.4 Chip position
0.6 0.4
GEX06630
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Stimulierter Emitter mit sehr hohem q q q q
Features q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high
Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders...
