SMBT3904
NPN Silicon Switching Transistor
High DC current gain: 0.1 m A to 100 m A q Low collector-emitter saturation voltage q plementary type: SMBT 3906 (PNP) q
SMBT 3904
Type SMBT 3904
Marking s1A
Ordering Code (tape and reel) Q68000-A4416
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 69 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values 40 60 6 200 330 150
- 65 … + 150
Unit V m A m W ˚C
315 245
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
SMBT 3904
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC =...
