SRD00231Z
SRD00231Z is Ternary PIN Photodiode in TO-Package / Central Pin manufactured by Siemens Semiconductor Group.
Ternary PIN Photodiode in TO-Package, Central Pin
SRD 00231Z
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In Ga As/In P
- PIN-photodiode Designed for application in fiber-optic munication systems Sensitive receiver for the 2nd and 3rd optical window (1300nm and 1500nm) Suitable for bit rates up to 2.5 Gbit/s Low junction and low package capacitance Fast switching times Low dark current Low noise High reverse-current stability by planar structure Hermetically sealed 3-pin metal case with central pin
Type SRD 00231Z
Ordering Code Q62702-Pxxxx
Connector/Flange TO with central pin
Maximum Ratings Parameter Forward current Reverse voltage Operating and storage temperature Max. radiant power into the opt. port (VR = 5 V) Soldering time (wave / dip soldering), distance between solder point and base plate ≥ 2 mm, 260 °C Symbol Values 10 20
- 40 … + 85 1 10 Unit m A V °C m W s
IF VR TA; Tstg
Φport ts
Semiconductor Group
SRD 00231Z
Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber. Parameter Spectral sensitivity λ = 1300 nm, VR = 5 V Change in spectral sensitivity in operating temperature range Rise and fall time RL = 50 Ω , VR = 5 V, λ = 1310 nm, Φport = 100 µW Total capacitance VR = 5 V,Φport = 0 f = 1 MHz Dark current VR = 5 V, TA = 85 °C, Φport = 0 Symbol Values 0.9 (≥ 0.8) < 0.2 0.25 (≤ 0.4) 0.7 (≤ 0.9) 1 (≤ 50) Unit A/W %/K ns p F n A
Sλ
∆Sλ tr; tf C5 ID
Capacitance C = f(VR) Φport = 0, f = 1 MHz
Relative Spectral Sensitivity VR = 5 V
1 0,9 0,8
Capacitance in p F
Sensitivity in A/W
0,7 0,6 0,5 0,4 0,3 0,2 0,1
0.1 0.1 1 10 100 Reverse Bias in V
0 800
W avelength in nm
Semiconductor...