TP60P Datasheet | Siemens Semiconductor Group

Features q Especially suitable for applications from 400 nm to 1120 nm q Cathode = back contact q Mounting by bolt/nut Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the visible light and near infrared range Typ Type TP 60 P Bestellnummer Ordering Code Q62607-S60 Semiconductor Group 10.95 fso06007 TP 60 P Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value - 40 ... + 80 1 Einheit Unit °C V Top; Tstg VR Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 0 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Form der bestrahlungsempfindlichen Fläche Shape of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 1 V; E = 0 Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Quantenausbeute, λ = 850 nm Quantum yield Leerlaufspannung, Open-circuit voltage Ev = 1000 Ix Ee = 0.5 m W/cm2; λ = 850 nm ϕ Symbol Symbol S λS max λ Wert Value 1 (≥ 0.7) 900 400 ... 1120 Einheit Unit µA/Ix nm nm 1.3 Sechseck hexagon ± 60 0.1 (≤ 2) 0.55 0.80 cm2 Grad deg. µA A/W Electrons Photon Sλ η VO VO 450 (≥ 270) 430 m V Semiconductor Group TP 60 P Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Kurzschluβstrom, Ev = 1000 Ix Short-circuit current Ev = 1000 Ix Ee = 0.5 m W/cm2; λ = 850 nm Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 1 kΩ; VR = 1 V; λ = 850 nm; Ip = 50 µA Temperaturkoeffizient von VO Temperature coefficient of...