BTS775G Datasheet | Siemens Semiconductor Group

Overview Features - - - - Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDS ON @ 25 °C: High-side switch: typ.85 mΩ, P-DSO-28-9 Low-side switch: typ. 45 mΩ Very high peak current capability Very low quiescent current Space- and thermal optimized power P-DSO-Package Full short-circuit-protection Operates up to 40 V Status flag diagnosis Overtemperature shut down with hysteresis Short-circuit detection and diagnosis Open-load detection and diagnosis C-MOS patible inputs Internal clamp diodes Isolated sources for external current sensing Over- and under-voltage detection with hysteresis Ordering Code Q67007-A9350 Package P-DSO-28-9 - - - - - - - - - - - - - Type BTS 775 G Description The BTS 775 G is a Trilith IC contains one double high-side switch and two low-side switches in one P-DSO-28-9 -Package. “Silicon instead of heatsink” bees true The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and increases the efficiency. The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It is fully protected and contains the signal conditioning circuitry for diagnosis. (The parable standard high-side product is the BTS 621L1.) Semiconductor Group 1 1999-01-07 BTS 775 G For minimized RDS ON the two low-side switches are N channel vertical power FETs in the SIEMENS SMART SIPMOS® technology. Fully protected by embedded protection functions. (The parable standard product is the BSP 78). Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9 pin configuration). The sources of all four power transistors are connected to separate pins. So the BTS 775 G can be used in H-Bridge configuration as well as in any other switch configuration. Moreover, it is possible to add current sense resistors. All these features open a broad range of automotive and industrial applications. Semiconductor...