SPD02N60 Datasheet | Siemens Semiconductor Group

Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor - N-Channel - Enhancement mode - Avalanche rated .. Pin 1 G Pin 2 D Pin 3 S Type SPD02N60 SPU02N60 600 V 2 A RDS(on) @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Ordering Code Q67040-S4133 Q67040-S4127-A2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Value 2 1.3 8 135 Unit A T C = 25 °C T C = 100 °C Pulsed drain current IDpulse EAS T C = 25 °C Avalanche energy, single pulse mJ I D = 2 A, VDD = 50 V, R GS = 25 Ω, T j = 25 °C Gate source voltage Power dissipation VGS Ptot Tj T stg ±20 55 -55 ... +150 -55 ... +150 55/150/56 V W...