SPD02N60 Datasheet
SPD02N60 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated Pin 1 G Type SPD02N60 SPU02N60 Pin 2 D Pin 3 S VDS ID 600 V 2 A RDS(on) @ VGS Pac.
ce, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 2.25 100 50 tbd K/W Unit RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) I DSS 600 2.1 3 4 V VGS = 0 V, I D = 0.25 mA Gate thr.
SPD02N60 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type SPD02N60 SPU02N60 VDS ID 600 V 2.
case Symbol min. Values typ. max. 2.25 100 50 tbd - Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) I DSS 600.