SPP80N03 Datasheet | Siemens Semiconductor Group

eatures - N channel - Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 Enhancement mode RDS(on) 0.006 Ω - Avalanche rated - dv/dt rated - 175°C operating temperature Type SPP80N03 SPB80N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4734-A2 Tube P-TO263-3-2 Q67040-S4734-A3 Tabe and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 k V/µs m J Unit A TC = 25 °C, 1) TC = 100 °C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 300 -55... +175 55/175/56 V W...