SPU30N03L Datasheet | Siemens Semiconductor Group

Features - N channel - Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 RDS(on) 0.012 Ω - Avalanche rated .. - Logic Level - dv/dt rated - 175°C operating temperature Type SPD30N03L SPU30N03L Package P-TO252 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4148-A2 Tape and Reel P-TO251-3-1 Q67040-S4149-A2 Tube Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 250 12 6 k V/µs m J Unit A TC = 25 °C, limited by bond wire TC = 100 °C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 120 -55... +175 55/175/56 V W °C TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Semiconductor Group SPD30N03L...