SXT3906 Datasheet | Siemens Semiconductor Group

PNP Silicon Switching Transistor High current gain: 0.1 m A to 100 m A q Low collector-emitter saturation voltage q SXT 3906 Type SXT 3906 Marking 2A Ordering Code (tape and reel) Q68000-A8397 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings .. Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 100 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 40 5 200 1 150 - 65 … + 150 Unit V m A W ˚C Rth JA Rth JS ≤ ≤ 120 50 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group SXT 3906 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 m A Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 30 V Collector-emitter cutoff current VCE = 30 V, VBE = - 3 V DC current gain IC = 100 µA, VCE = 1 V IC = 1 m A, VCE = 1 V IC = 10 m A, VCE = 1 V IC = 50 m A, VCE = 1 V IC = 100 m A, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 m A, IB = 1 m A IC = 50 m A, IB = 5 m A Base-emitter saturation voltage1) IC = 10 m A, IB = 1 m A IC = 50 m A, IB = 5 m A V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 ICEV h FE 60 80 100 60 30 VCEsat - - VBEsat 0.65 - - - 0.85...