Siemens BFP450
NPN Silicon RF Transistor
| Part No. | BFP450 |
|---|---|
| Datasheet | BFP450 Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 96 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 4.5 15 1.5 100 10 450 150 -65 ...+150 -65 ...+150 ≤ 130 Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS mA mW °C K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 450ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 50 mA, VCE = 4 V AC characteristics Transition frequency IC = 90 mA, VCE = 3 V, f = 1 GHz IC = 90 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB...
