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BFP450 - Surface mount high linearity wideband silicon NPN RF bipolar transistor

General Description

is part of Infineon’s established fourth generation RF bipolar transistor family.

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Datasheet Details

Part number BFP450
Manufacturer Infineon
File Size 428.74 KB
Description Surface mount high linearity wideband silicon NPN RF bipolar transistor
Datasheet download datasheet BFP450 Datasheet

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BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Product description The BFP450 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its tmraankseittihoendfreevqicueensuciytafTbolef 24 GHz, collector design and high for energy efficiency applications linearity characteristics up to 3 GHz. It remains cost competitive without compromising on ease of use. Feature list • Minimum noise figure NFmin = 1.7 dB at 1.9 GHz, 3 V, 50 mA • High gain Gma = 15.5 dB at 1.9 GHz, 3 V, 90 mA • OIP3 = 31 dBm at 1.9 GHz, 3 V, 90 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020.