BFP450 Datasheet | Siemens Semiconductor Group

SIEGET® 25 NPN Silicon RF Transistor - For medium power amplifiers - pression point P -1d B = +19 d Bm at 1.8 GHz maximum available gain G ma = 14 d B at 1.8 GHz Noise figure F = 1.25 d B at 1.8 GHz - Transition frequency f T = 24 GHz - Gold metalization for high reliability - SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line BFP 450 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 450 Marking Ordering Code ANs Q62702-F1590 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 96 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 4.5 15 1.5 100 10 450 150 -65 ...+150 -65 ...+150 ≤ 130 Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg Rth JS m A m W °C K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 450 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 m A, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 50 m A, VCE = 4 V AC characteristics Transition frequency IC = 90 m A, VCE = 3 V, f = 1 GHz IC = 90 m A, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 m A, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 2) IC = 50 m A, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 50 m A, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intersept point IC = 50 m A, VCE = 3 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz 1d B pression point...