| Part Number | BFP450 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview |
SIEGET® 25
NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • .
causes an additional reverse biased diode between emitter and collector, which does not effect normal operation.
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Transistor Schematic Diagram
The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipate. |
BFP450 Datasheet and Specifications PDF
The BFP450 is a NPN Silicon RF Transistor.
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Height | 800 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BFP450 Datasheet |
|---|---|
| Description | Surface mount high linearity wideband silicon NPN RF bipolar transistor |
| Manufacturer | Infineon |
| Overview |
The BFP450 is a low noise device based on a grounded emitter (SIEGET™) that
is part of Infineon’s established fourth generation RF bipolar transistor family. Its
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* Minimum noise figure NFmin = 1.7 dB at 1.9 GHz, 3 V, 50 mA * High gain Gma = 15.5 dB at 1.9 GHz, 3 V, 90 mA * OIP3 = 31 dBm at 1.9 GHz, 3 V, 90 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for ind. |