Description
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns)
Semiconductor Group
33
01.95
HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM
The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 5
Features
- include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery backup.
HYB511000BJ- Datasheet
