HYB511000BJ- is 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| HYB511000BJ-50 | 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
| HYB511000BJ-60 | 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
| HYB511000BJ-70 | 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
| HYB511000BJL-50 | 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
| HYB511000BJL-60 | 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
The HYB 511000BJ/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 511000BJ/BJL to be packaged in a standard plastic P-SOJ-26/20. This package size provides high system bit densities and is patible with monly used automatic testing and insertion equipment.
