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HYM328025GS-50 - 8M x 32-Bit EDO-DRAM Module

Description

VSS DQ16 DQ17 DQ18 DQ19 N.C.

Features

  • (max. ) are reference levels for measuring timing of.

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Full PDF Text Transcription

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8M × 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 • SIMM modules with 8 388 608 words by 32-bit organization for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 5280 mW active (-50 version) max. 4840 mW active (-60 version) CMOS – 88 mW standby TTL –176 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 16 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-15) with 25.
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