SPB80N03L Datasheet | Siemens Semiconductor Group

SPP80N03L SIPMOS® Power Transistor Features - N channel - Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 RDS(on) 0.006 Ω - Avalanche rated - Logic Level - dv/dt rated - 175°C operating temperature Type SPP80N03L SPB80N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4735-A2 Tube P-TO263-3-2 Q67040-S4735-A3 Tape and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A TC = 25 °C, TC = 100 °C 1) Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy,...