Datasheet Details
| Part number | 24N60FJD2 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 344.40 KB |
| Description | 600V DP MOS POWER TRANSISTOR |
| Datasheet |
 24N60FJD2 Datasheet
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General Description
SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
Key Features
- 24A, 600V, RDS(on)(typ. )=0.14@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123 TO-3P.