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24N60TD2 - 600V DP MOS POWER TRANSISTOR

Download the 24N60TD2 datasheet PDF. This datasheet also covers the 24N60FJD2 variant, as both devices belong to the same 600v dp mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 24A, 600V, RDS(on)(typ. )=0.14@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123 TO-3P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (24N60FJD2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 24N60TD2
Manufacturer Silan Microelectronics
File Size 344.40 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet 24N60TD2 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
24N60FD2 600V DP MOS POWER TRANSISTOR
24N60FJD2 600V DP MOS POWER TRANSISTOR
24N60PN 600V DP MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVS24N60F(FJ)(PN)(T)D2_Datasheet 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. FEATURES  24A, 600V, RDS(on)(typ.)=0.14@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 3 1.Gate 2.Drain 3.