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24N60TD2 - 600V DP MOS POWER TRANSISTOR

This page provides the datasheet information for the 24N60TD2, a member of the 24N60FJD2 600V DP MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 24A, 600V, RDS(on)(typ. )=0.14@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123 TO-3P.

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Datasheet preview – 24N60TD2

Datasheet Details

Part number 24N60TD2
Manufacturer Silan Microelectronics
File Size 344.40 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet 24N60TD2 Datasheet
Additional preview pages of the 24N60TD2 datasheet.

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Other Datasheets by Silan Microelectronics
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Full PDF Text Transcription

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Silan Microelectronics SVS24N60F(FJ)(PN)(T)D2_Datasheet 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. FEATURES  24A, 600V, RDS(on)(typ.)=0.14@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 3 1.Gate 2.Drain 3.
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