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2KG026075YQ - SWITCHING DIODE CHIPS

Datasheet Summary

Description

Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology.

Ø Ø This chip can be encapsulated as 1N4148 switching diode.

When the chip is selected glass package, the chip thickness is 100µm, and the top electrodes material is Ag bump, the back-side electrodes material is Ag.

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Datasheet Details

Part number 2KG026075YQ
Manufacturer Silan Microelectronics
File Size 74.35 KB
Description SWITCHING DIODE CHIPS
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2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 100µm, and the top electrodes material is Ag bump, the back-side electrodes material is Ag. Ø Chip size: 0.26 X 0.26 (mm)2. 2KG026XXX CHIP TOPOGRAPHY 2KG026075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C) Characteristics Forward Voltage Reverse Voltage Reverse Current Diode Capacitance Reverse Recovery Time Symbol VF VBR IR Cd trr IF=10mA. IF=100mA. IB=100µA. VR=20V. VR=75V. f=1MHz; VR=0. When switched from I F=10mA to VR=6V; RL=100Ω; measured at IR=1mA. --4 ns Test Conditions Min. -0.62 100 ---Typ. -0.9 120 --1.9 Max. 1.0 1.
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