2KG028075YQ - SWITCHING DIODE CHIPS

Silan Microelectronics

General Description

Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology.

Ø Ø This chip can be encapsulated as 1N4148 switching diode.

When the chip is selected glass package, the chip thickness is 120µm, and the top electrodes material is Ag bump, the back-side electrodes material is Ag.

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2KG028075YQ switching diode chips by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	2KG028075YQ
Manufacturer	Silan Microelectronics
File Size	68.85 KB
Description	SWITCHING DIODE CHIPS
Datasheet	2KG028075YQ Datasheet

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2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 120µm, and the top electrodes material is Ag bump, the back-side electrodes material is Ag. Ø Chip size: 0.28 X 0.28 (mm2). 2KG028XXX CHIP TOPOGRAPHY 2KG028075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C) Characteristics Forward Voltage Reverse voltage Reverse Current Diode Capacitance Reverse Recovery Time Symbol VF VBR IR Cd trr IF=10mA. IF=100mA. IB=100µA. VR=20V. VR=75V. f=1MHz; VR=0. When switched from I F=10mA to VR=6V; RL=100Ω; measured at IR=1mA. --4 ns Test Conditions Min. -0.62 100 ---Typ. -0.9 120 --1.9 Max. 1.0 1.