Datasheet4U Logo Datasheet4U.com

7N65RMJ - 650V N-CHANNEL MOSFET

General Description

SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Key Features

  • 2 1 13 3 TO-252-2L 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 12 3 TO-251J-3L.
  • 7A, 650V, RDS(on)(typ. )=1.2@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-220F-3L 1 2 3 TO-220FJH-3L.

📥 Download Datasheet

Datasheet Details

Part number 7N65RMJ
Manufacturer Silan Microelectronics
File Size 368.83 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet 7N65RMJ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF7N65RD(MJ)(FJH)(F)(T)_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2 1 13 3 TO-252-2L 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 12 3 TO-251J-3L  7A, 650V, RDS(on)(typ.)=1.