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P14N65FJD - 650V SUPER JUNCTION MOS POWER TRANSISTOR

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Silan Microelectronics

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P14N65FJD 650V SUPER JUNCTION MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – P14N65FJD

Datasheet Details

Part number	P14N65FJD
Manufacturer	Silan Microelectronics
File Size	303.37 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	P14N65FJD Datasheet
Additional preview pages of the P14N65FJD datasheet.

Product details

Description

SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology.

Features

14A,650V, RDS(on)(typ. )=0.26@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 123 12 3 TO-220FJD-3L TO-220-3L.

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Other Datasheets by Silan Microelectronics

P14N65KD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR
P14N65TD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Published: Oct 25, 2024 |