Datasheet4U Logo Datasheet4U.com

P14N65TD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the P14N65TD2 datasheet PDF. This datasheet also covers the P14N65FJD variant, as both devices belong to the same 650v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 14A,650V, RDS(on)(typ. )=0.26@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 123 12 3 TO-220FJD-3L TO-220-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P14N65FJD-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P14N65TD2
Manufacturer Silan Microelectronics
File Size 303.37 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet P14N65TD2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 1 23 3 TO-262-3L 1.Gate 2.Drain 3.Source FEATURES  14A,650V, RDS(on)(typ.)=0.