SFR35F60F2 Datasheet | Silan Microelectronics

DESCRIPTION SFR35F60F2 is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics. This device is intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drivers. 1 2 TO-220F-2L FEATURES - Ultrafast 60 Nanosecond Recovery Time - High Current Capability - Low Forward Voltage Drop - High surge current capability - Low reverse current leakage - 175C Operating Junction Temperature ORDERING INFORMATION Part No. SFR35F60F2 Package TO-220F-2L Marking 35F60F2 Hazardous Substance Control Pb free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.2 Page 1 of 6 Silan Microelectronics SFR35F60F2_Datasheet ABSOLUTE MAXIMUM RATINGS Characteristics Peak Repetitive Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current @8.3ms Power Dissipation(TC=25C) Single avalanche energy Operation Junction Temperature Range Storage Temperature Range Symbol VRRM IF(AV) IFSM PD EAS TJ Tstg Rating Unit 100 m J -40～+175 C -40～+175 C THERMAL CHARACTERISTICS (PER LEG) Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC Min. -- Typ. -- Max....