SFR35F60P2 Description
SFR35F60P2 is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and...
SFR35F60P2 Key Features
- Ultrafast 60 Nanosecond Recovery Time
- High Current Capability
- Low Forward Voltage Drop
- High surge current capability
- Low reverse current leakage
- 175C Operating Junction Temperature