STS65R190SS2 Datasheet | Silan Microelectronics

Silan Microelectronics STS65R190F(L8A)(T)(S)(D)S2_Datasheet 20A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 TO-220F-3L 1.Gate 2.Drain 3.Source TO-252-2L D(2) G(1) S(3) S(3) S(3) DFN-4-8x8x0.85-2.0 Features - 20A, 650V, RDS(on)(typ.)=0.155@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 123 TO-220-3L 1 3 TO-263-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings...