STS65R580DS2 Overview
STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
STS65R580DS2 Key Features
- 8A, 650V, RDS(on)(typ.)=0.52@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant