STS65R580DS2 Datasheet | Silan Microelectronics

Silan Microelectronics STS65R580D(F)(S)(MJ)S2_Datasheet 8A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 8A, 650V, RDS(on)(typ.)=0.52@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 1 3 TO-263-2L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 1 3 TO-252-2L 12 3 TO-220F-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 650 2.0~4.0 0.58 32...