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STS65R580DS2 Datasheet 650V SUPER JUNCTION MOS POWER TRANSISTOR

Manufacturer: Silan Microelectronics

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Datasheet Details

Part number STS65R580DS2
Manufacturer Silan Microelectronics
File Size 440.32 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet STS65R580DS2 Datasheet

General Description

STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

Silan Microelectronics STS65R580D(F)(S)(MJ)S2_Datasheet 8A, 650V SUPER JUNCTION MOS POWER.

Key Features

  • 8A, 650V, RDS(on)(typ. )=0.52@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1 3 TO-263-2L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 1 3 TO-252-2L 12 3 TO-220F-3L KEY.

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