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STS65R580SS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the STS65R580SS2, a member of the STS65R580DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Description

STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 8A, 650V, RDS(on)(typ. )=0.52@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1 3 TO-263-2L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 1 3 TO-252-2L 12 3 TO-220F-3L KEY.

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Datasheet preview – STS65R580SS2

Datasheet Details

Part number STS65R580SS2
Manufacturer Silan Microelectronics
File Size 440.32 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet STS65R580SS2 Datasheet
Additional preview pages of the STS65R580SS2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics STS65R580D(F)(S)(MJ)S2_Datasheet 8A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  8A, 650V, RDS(on)(typ.)=0.
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