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STS65R900DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the STS65R900DS2 datasheet PDF (STS65R900DS2-SilanMicroelectronics included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v super junction mos power transistor.

Description

STS65R900D(F)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 5A, 650V, RDS(on)(typ. )=0.75@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 13 TO-252-2L 12 3 TO-220F-3L KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STS65R900DS2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STS65R900DS2
Manufacturer Silan Microelectronics
File Size 474.81 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet STS65R900DS2 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics STS65R900D(F)S2_Datasheet 5A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R900D(F)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  5A, 650V, RDS(on)(typ.)=0.
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