SVD1055SA Datasheet | Silan Microelectronics

SVD1055SA_Datasheet 17A, 55V N/P-CHANNEL MOSFET GENERAL DESCRIPTION SVD1055SA is a bination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.It's widely used in electronic ballasts and low power SMPS. Features - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVD1055SA SVD1055SATR Package SOP-8-225-1.27...