SVD1055SA Description
SVD1055SA is a bination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.It's widely used in electronic...
SVD1055SA Key Features
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability