The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SVD1055SA_Datasheet
17A, 55V N/P-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.It's widely used in electronic ballasts and low power SMPS.
FEATURES
Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No. SVD1055SA SVD1055SATR
Package SOP-8-225-1.27 SOP-8-225-1.