SVD10N60F Datasheet | Silan Microelectronics

SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 10A,600V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt...