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SVD10N60F - 600V N-CHANNEL MOSFET

Download the SVD10N60F datasheet PDF. This datasheet also covers the SVD10N60T variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

structure DMOS technology.

Key Features

  • ∗ 10A,600V,RDS(on)(typ. )=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD10N60T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD10N60F
Manufacturer Silan Microelectronics
File Size 586.71 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVD10N60F Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVD10N60T 600V N-CHANNEL MOSFET
SVD10N65F 650V N-CHANNEL MOSFET
SVD10N65FG 650V N-CHANNEL MOSFET
SVD10N65T 650V N-CHANNEL MOSFET
SVD1055SA 55V N/P-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 10A,600V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No.