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SVD10N60F Datasheet 600v N-channel MOSFET

Manufacturer: Silan Microelectronics

Overview: SVD10N60T/F_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

Key Features

  • ∗ 10A,600V,RDS(on)(typ. )=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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