Datasheet4U Logo Datasheet4U.com

SVD2N60M - 600V N-CHANNEL MOSFET

General Description

structure VDMOS technology.

Key Features

  • ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ. )=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

📥 Download Datasheet

Datasheet Details

Part number SVD2N60M
Manufacturer Silan Microelectronics
File Size 513.35 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVD2N60M Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVD201 X Band VCO / PLO Sanyo Semicon Device
SVD202 X Band VCO / PLO Sanyo Semicon Device
SVD101 X Band VCO / PLO Sanyo Semicon Device
SVD102 X Band VCO / PLO Sanyo Semicon Device
SVD301 X Band VCO / PLO Sanyo Semicon Device

Other Datasheets by Silan Microelectronics

Part Number Description
SVD2N60D 600V N-CHANNEL MOSFET
SVD2N60DTR 600V N-CHANNEL MOSFET
SVD2N60F 600V N-CHANNEL MOSFET
SVD2N60T 600V N-Channel MOSFET
SVD2N65D 650V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.