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SVD2N60T Datasheet 600v N-channel MOSFET

Manufacturer: Silan Microelectronics

Overview: .DataSheet.co.kr SVD2N60T 2A, 600V N-Channel MOSFET GENERAL.

General Description

2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S1 3 1.Gate 2.Drain 3.Source structure DMOS technology.

The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Key Features

  • ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ. )=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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