SVD2N60T Description
2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S1 3 1.Gate 2.Drain 3.Source structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation...