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SVD2N60T - 600V N-Channel MOSFET

General Description

structure DMOS technology.

Key Features

  • ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ. )=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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Datasheet Details

Part number SVD2N60T
Manufacturer Silan Microelectronics
File Size 439.03 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SVD2N60T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SVD2N60T 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION 2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S1 3 1.Gate 2.Drain 3.Source structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 12 3 TO-220-3L FEATURES ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING SPECIFICATIONS Part No.