SVD2N60T Datasheet | Silan Microelectronics

.DataSheet.co.kr 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin S1 3 1.Gate 2.Drain 3.Source structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 12 3 TO-220-3L Features ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V Low gate...